SI3443DVTRPBF
MOSFET P-CH 20V 4.4A MICRO6Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies P-Channel HEXFET® MOSFET, part number SI3443DVTRPBF, is a surface-mount device designed for high-efficiency power management applications. This component features a drain-source voltage (Vdss) of 20V and a continuous drain current (Id) of 4.4A at 25°C. The Rds(On) is specified at a maximum of 65mOhm at 4.4A drain current and 4.5V gate-source voltage. With a gate charge (Qg) of 15 nC at 4.5V, it offers optimized switching performance. The device is housed in a Micro6™ (TSOP-6) package, facilitating compact board layouts. Operating across a temperature range of -55°C to 150°C (TJ), it is suitable for use in automotive and industrial electronics. This MOSFET supports a gate-source voltage (Vgs) range of ±12V and has a threshold voltage (Vgs(th)) of 1.2V maximum at 250µA. Its maximum power dissipation is 2W.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.4A (Ta) |
| Rds On (Max) @ Id, Vgs | 65mOhm @ 4.4A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta) |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Supplier Device Package | Micro6™(TSOP-6) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1079 pF @ 10 V |