SI3443DVTR
MOSFET P-CH 20V 4.4A 6-TSOPManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies SI3443DVTR is a P-Channel Power MOSFET designed for efficient switching applications. This device features a 20V Drain-Source Voltage (Vdss) and a continuous drain current (Id) of 4.4A at 25°C. The on-resistance (Rds On) is specified at a maximum of 65mOhm when Id is 4.4A and Vgs is 4.5V. With a gate charge (Qg) of 15nC at 4.5V and input capacitance (Ciss) of 1079pF at 10V, it offers optimized switching performance. The threshold voltage (Vgs(th)) is 1.5V maximum at 250µA. This MOSFET is housed in a compact Micro6™(TSOP-6) package, suitable for surface mounting. It is commonly utilized in power management, battery charging, and various consumer electronics applications. The component is supplied in Cut Tape (CT) packaging.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.4A (Ta) |
| Rds On (Max) @ Id, Vgs | 65mOhm @ 4.4A, 4.5V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | Micro6™(TSOP-6) |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1079 pF @ 10 V |
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