SI3443DV
MOSFET P-CH 20V 4.4A MICRO6Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® P-Channel MOSFET, part number SI3443DV, is a surface mount component designed for demanding applications. This device features a 20V drain-source voltage and a continuous drain current capability of 4.4A at 25°C. Optimized for efficient switching, it exhibits a maximum on-resistance of 65mOhm at 4.4A and 4.5V gate-source voltage. The SI3443DV utilizes a P-Channel MOSFET technology and is supplied in a Micro6™(TSOP-6) package, also known as SOT-23-6 Thin. Key electrical characteristics include a maximum gate charge of 15 nC at 4.5V and an input capacitance of 1079 pF at 10V drain-source voltage. With an operating temperature range of -55°C to 150°C (TJ) and a power dissipation of 2W (Ta), this MOSFET is suitable for use in power management, battery charging, and general switching circuits across various industrial sectors.
Additional Information
Series: HEXFET®RoHS Status: RoHS Compliant By ExemptionManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.4A (Ta) |
| Rds On (Max) @ Id, Vgs | 65mOhm @ 4.4A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta) |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | Micro6™(TSOP-6) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1079 pF @ 10 V |
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