ISZ113N10NM5LFATMA1
OPTIMOSTM5LINEARFET100VManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ 5 series N-Channel Power MOSFET, part number ISZ113N10NM5LFATMA1. This device features a 100 V drain-source breakdown voltage and a continuous drain current capability of 10 A at 25°C ambient and 63 A at 25°C case temperature. The low on-resistance is specified as 11.3 mOhm maximum at 20 A and 10 V gate drive. With a maximum power dissipation of 2.5 W (ambient) and 100 W (case), this MOSFET is suitable for demanding applications. The gate charge is 29 nC maximum at 10 V, and input capacitance (Ciss) is 2300 pF maximum at 50 V. The device operates across a temperature range of -55°C to 175°C. Packaged in an 8-PowerTDFN (PG-TSDSON-8 FL) and supplied on tape and reel, this MOSFET is utilized in power management, automotive, and industrial applications.
Additional Information
Series: OptiMOS™ 5RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta), 63A (Tc) |
| Rds On (Max) @ Id, Vgs | 11.3mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 100W (Tc) |
| Vgs(th) (Max) @ Id | 3.9V @ 36µA |
| Supplier Device Package | PG-TSDSON-8 FL |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 29 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2300 pF @ 50 V |
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