ISZ0901NLSATMA1
25V, N-CH MOSFET, LOGIC LEVEL, PManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ N-Channel Power MOSFET, part number ISZ0901NLSATMA1, is a 25V device designed for efficient power switching applications. This surface mount component, housed in a PG-TDSON-8-25 package, offers a continuous drain current of 40A at 25°C with a maximum power dissipation of 26W. Featuring a low on-resistance of 8.1mOhm at 20A and 10V, it ensures minimal conduction losses. The logic-level gate drive capability is supported with a Vgs(th) of 2V, and effective operation is achievable with drive voltages from 4.5V to 10V. Key parameters include a gate charge (Qg) of 9.1 nC at 10V and input capacitance (Ciss) of 670 pF at 12V. Operating across a temperature range of -55°C to 150°C, this MOSFET is utilized in automotive, industrial motor control, and power supply sectors. It is supplied in Tape & Reel packaging.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 8.1mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 26W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | PG-TDSON-8-25 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 9.1 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 670 pF @ 12 V |
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