ISZ0804NLSATMA1
MOSFET N-CH 100V 11A/58A TSDSONManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ 5 series N-channel power MOSFET, part number ISZ0804NLSATMA1. This 100 V device features a maximum continuous drain current of 11 A at ambient temperature and 58 A at case temperature, with a low on-resistance of 11.5 mOhm at 20 A and 10 Vgs. The MOSFET offers a maximum power dissipation of 2.1 W (Ta) and 60 W (Tc), and is available in a PG-TSDSON-8-26 package for surface mounting. Key electrical characteristics include a gate charge of 24 nC (max) at 10 Vgs and an input capacitance of 1600 pF (max) at 50 Vds. Operating temperature range is -55°C to 150°C. This component finds application in automotive and industrial power management systems.
Additional Information
Series: OptiMOS™ 5RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta), 58A (Tc) |
| Rds On (Max) @ Id, Vgs | 11.5mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.1W (Ta), 60W (Tc) |
| Vgs(th) (Max) @ Id | 2.3V @ 28µA |
| Supplier Device Package | PG-TSDSON-8-26 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1600 pF @ 50 V |
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