ISZ0803NLSATMA1
MOSFET N-CH 100V 7.7A/37A TSDSONManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ 5 series N-Channel Power MOSFET, part number ISZ0803NLSATMA1, features a 100V drain-source breakdown voltage. This device offers a continuous drain current of 7.7A at ambient temperature (Ta) and 37A at case temperature (Tc). The maximum power dissipation is rated at 2.1W (Ta) and 43W (Tc). With a low on-resistance of 16.9mOhm at 20A and 10V Vgs, it is suitable for applications requiring efficient power switching. Key parameters include a gate charge of 15 nC at 10V Vgs, input capacitance of 1000 pF at 50V Vds, and a threshold voltage of 2.3V at 18µA. The MOSFET operates across a temperature range of -55°C to 150°C. It is supplied in a PG-TSDSON-8-26 package for surface mounting and is available on tape and reel. This component is commonly utilized in power management and automotive applications.
Additional Information
Series: OptiMOS™ 5RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.7A (Ta), 37A (Tc) |
| Rds On (Max) @ Id, Vgs | 16.9mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.1W (Ta), 43W (Tc) |
| Vgs(th) (Max) @ Id | 2.3V @ 18µA |
| Supplier Device Package | PG-TSDSON-8-26 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1000 pF @ 50 V |
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