ISZ0501NLSATMA1
25V, N-CH MOSFET, LOGIC LEVEL, PManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™ 5 series N-Channel Power MOSFET, part number ISZ0501NLSATMA1. This device offers a 25V drain-source voltage and a continuous drain current of 40A (Tc) at 25°C. Featuring a low on-resistance of 3.9mOhm at 20A and 10V, it is designed for efficient power switching applications. The logic-level gate threshold of 2V (Vgs(th) Max @ Id) supports lower voltage drive requirements. Key parameters include a maximum power dissipation of 30W (Tc), gate charge of 13.6 nC @ 10V, and input capacitance of 910 pF @ 12V. The component utilizes advanced MOSFET technology, is housed in a PG-TDSON-8-25 surface mount package, and is supplied on tape and reel. This N-Channel MOSFET is suitable for use in automotive and industrial power management systems.
Additional Information
Series: OptiMOS™ 5RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.9mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 30W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | PG-TDSON-8-25 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 13.6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 910 pF @ 12 V |
Request a Quote
Clients Also Buy
BSZ070N08LS5ATMA1
MOSFET N-CH 80V 40A TSDSON
ISC0702NLSATMA1
MOSFET N-CH 60V 23A/135A TDSON-8
BSZ040N06LS5ATMA1
MOSFET N-CH 60V 40A TSDSON
