ISZ019N03L5SATMA1
MOSFET N-CH 30V 22A/40A TSDSONManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ N-Channel Power MOSFET, part number ISZ019N03L5SATMA1, offers a 30 V drain-source breakdown voltage. This device features a low on-resistance of 1.9 mOhm at 20 A and 10 V Vgs, with a continuous drain current rating of 22 A at ambient temperature and 40 A at case temperature. The gate charge is specified at 44 nC maximum at 10 V, and the input capacitance (Ciss) is 2800 pF maximum at 15 V Vds. Designed for surface mounting, it utilizes the PG-TSDSON-8-FL package. The operating temperature range is -55°C to 150°C. This component is suitable for applications in automotive and industrial power management systems.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 22A (Ta), 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.9mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | PG-TSDSON-8-FL |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 44 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2800 pF @ 15 V |
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