IST007N04NM6AUMA1
MOSFET N-CH 40V 54A/440A HSOF-5Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies IST007N04NM6AUMA1 is an N-Channel Power MOSFET from the OptiMOS™ 6 series. This device features a drain-source voltage (Vdss) of 40 V and a continuous drain current (Id) of 54 A at 25°C ambient, with a pulsed drain current capability of 440 A at 25°C case. The MOSFET exhibits a low on-resistance (Rds On) of 0.7 mOhm at 100 A and 10 V gate-source voltage. Key parameters include a gate charge (Qg) of 152 nC maximum at 10 V and input capacitance (Ciss) of 7900 pF maximum at 20 V. Designed for surface mount applications, it is housed in a PG-HSOF-5-4 (5-PowerSFN) package and operates within a temperature range of -55°C to 175°C. The maximum power dissipation is 3.8 W at ambient and 250 W at case temperature. This component is suitable for high-power switching applications in automotive and industrial sectors.
Additional Information
Series: OptiMOS™ 6RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 5-PowerSFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 54A (Ta), 440A (Tc) |
| Rds On (Max) @ Id, Vgs | 0.7mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 250W (Tc) |
| Vgs(th) (Max) @ Id | 3.3V @ 250µA |
| Supplier Device Package | PG-HSOF-5-4 |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 152 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7900 pF @ 20 V |
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