ISK057N04LM6ATLA1
MOSFET N-CH 40V 64A 6VSONManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ 6 ISK057N04LM6ATLA1 is an N-Channel Power MOSFET featuring a 40V drain-source breakdown voltage. This device offers a continuous drain current of 64A (Tc) and a maximum on-resistance of 5.75mOhm at 20A and 10V Vgs. Designed for efficient power conversion, it has a gate charge of 12nC (max) at 10V Vgs and 39.1W (Tc) maximum power dissipation. The device is housed in a PG-VSON-6-1 package, suitable for surface mounting. Operating temperature ranges from -55°C to 155°C (TJ). Key applications include automotive systems and industrial power supplies.
Additional Information
Series: OptiMOS™ 6RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 155°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 64A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.75mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.1W (Ta), 39.1W (Tc) |
| Vgs(th) (Max) @ Id | 2.3V @ 250µA |
| Supplier Device Package | PG-VSON-6-1 |
| Grade | - |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 870 pF @ 20 V |
| Qualification | - |
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