ISK036N03LM5AULA1
TRENCH <= 40V PG-VSON-6Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™ 5 N-Channel MOSFET, part number ISK036N03LM5AULA1, features a 30V drain-source breakdown voltage and a continuous drain current capability of 44A at 25°C (Tc). This device exhibits a low on-resistance of 3.6mOhm maximum at 20A and 10V Vgs. The ISK036N03LM5AULA1 is housed in a 6-PowerVDFN (PG-VSON-6-1) surface mount package, designed for efficient thermal management with a maximum power dissipation of 11W (Tc). Key electrical characteristics include a gate charge of 21.5 nC maximum at 10V Vgs and an input capacitance of 1400 pF maximum at 15V Vds. Operating over a junction temperature range of -55°C to 150°C, this MOSFET is suitable for applications in automotive, industrial, and power supply designs.
Additional Information
Series: OptiMOS™ 5RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 44A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.6mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 11W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | PG-VSON-6-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 21.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1400 pF @ 15 V |
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