ISK018NE1LM7AULA1
ISK018NE1LM7AULA1 MOSFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ 7 N-Channel power MOSFET, part number ISK018NE1LM7AULA1, offers a 15V drain-source voltage and a continuous drain current of 30A at 25°C ambient and 129A at 25°C case temperature. This surface mount component, housed in a PG-VSON-6-1 package, features a low on-resistance of 1.8 mOhm at 20A and 7V gate-source voltage. With a maximum power dissipation of 2.1W ambient and 39W case, it is suitable for applications requiring high current density and efficiency. Key parameters include a gate charge of 13.6 nC at 7V and an input capacitance of 1600 pF at 7.5V. The ISK018NE1LM7AULA1 is designed for operation across a wide temperature range of -55°C to 150°C. This device finds application in power management solutions for consumer electronics and industrial automation.
Additional Information
Series: OptiMOS™ 7RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Digi-Reel®Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Digi-Reel® |
| Package / Case | 6-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Ta), 129A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.8mOhm @ 20A, 7V |
| FET Feature | - |
| Power Dissipation (Max) | 2.1W (Ta), 39W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 106µA |
| Supplier Device Package | PG-VSON-6-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 7V |
| Vgs (Max) | ±7V |
| Drain to Source Voltage (Vdss) | 15 V |
| Gate Charge (Qg) (Max) @ Vgs | 13.6 nC @ 7 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1600 pF @ 7.5 V |
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