Home

Products

Discrete Semiconductor Products

Transistors

FETs, MOSFETs

Single FETs, MOSFETs

ISC110N12NM6ATMA1

Banner
productimage

ISC110N12NM6ATMA1

TRENCH >=100V

Manufacturer: Infineon Technologies

Categories: Single FETs, MOSFETs

Quality Control: Learn More

N-Channel 120 V 11A (Ta), 62A (Tc) 3W (Ta), 94W (Tc) Surface Mount SuperSO8

Additional Information

Series: OptiMOS™ 6RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: ActivePackaging: Cut Tape (CT)Datasheet:
Technical Details:
PackagingCut Tape (CT)
Package / Case8-PowerTDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C11A (Ta), 62A (Tc)
Rds On (Max) @ Id, Vgs11mOhm @ 26A, 10V
FET Feature-
Power Dissipation (Max)3W (Ta), 94W (Tc)
Vgs(th) (Max) @ Id3.6V @ 35µA
Supplier Device PackageSuperSO8
Grade-
Drive Voltage (Max Rds On, Min Rds On)8V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)120 V
Gate Charge (Qg) (Max) @ Vgs19.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1400 pF @ 60 V
Qualification-

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
ISC010N04NM6ATMA1

TRENCH <= 40V

product image
ISC022N10NM6ATMA1

TRENCH >=100V PG-TSON-8

product image
BSZ024N04LS6ATMA1

MOSFET N-CH 40V 24A/40A TSDSON