ISC0806NLSATMA1
MOSFET N-CH 100V 16A/97A TDSONManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ 5 ISC0806NLSATMA1 is an N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a drain-source voltage (Vdss) of 100V and offers a continuous drain current (Id) of 16A at ambient temperature and 97A at case temperature. With a low on-resistance (Rds On) of 5.4mOhm at 50A and 10V Vgs, it minimizes conduction losses. The device supports gate drive voltages from 4.5V to 10V, with a maximum gate-source voltage of ±20V. Key parameters include gate charge (Qg) of 49 nC and input capacitance (Ciss) of 3400 pF. This MOSFET is housed in an 8-lead PG-TDSON-8-7 package, suitable for surface mounting. Its power dissipation capabilities are 2.5W (Ta) and 96W (Tc). The ISC0806NLSATMA1 is utilized in demanding applications across automotive, industrial automation, and power supply sectors.
Additional Information
Series: OptiMOS™ 5RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16A (Ta), 97A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.4mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 96W (Tc) |
| Vgs(th) (Max) @ Id | 2.3V @ 61µA |
| Supplier Device Package | PG-TDSON-8-7 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 49 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3400 pF @ 50 V |
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