ISC0804NLSATMA1
MOSFET N-CH 100V 12A/59A TDSON-8Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ 5 series N-Channel Power MOSFET, part number ISC0804NLSATMA1. This device features a 100V drain-source breakdown voltage and offers a continuous drain current of 12A at ambient temperature and 59A at case temperature. With a maximum power dissipation of 2.5W (Ta) and 60W (Tc), it is designed for efficient thermal management in demanding applications. The low on-resistance of 10.9mOhm at 20A and 10V gate drive, coupled with a gate charge of 24nC, makes it suitable for high-frequency switching. The input capacitance (Ciss) is a maximum of 1600pF at 50V. This MOSFET is packaged in a PG-TDSON-8 and supplied on tape and reel. It is utilized in automotive and industrial power supply applications.
Additional Information
Series: OptiMOS™ 5RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta), 59A (Tc) |
| Rds On (Max) @ Id, Vgs | 10.9mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 60W (Tc) |
| Vgs(th) (Max) @ Id | 2.3V @ 28µA |
| Supplier Device Package | PG-TDSON-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1600 pF @ 50 V |
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