ISC0803NLSATMA1
MOSFET N-CH 100V 8.8A/37A 8TDSONManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ 5 series N-Channel Power MOSFET, part number ISC0803NLSATMA1. This 100V device features a low Rds(on) of 16.9mOhm at 20A and 10V Vgs. It offers continuous drain current capabilities of 8.8A at ambient temperature and 37A at case temperature, with power dissipation of 2.5W (Ta) and 43W (Tc). The ISC0803NLSATMA1 utilizes a PG-TDSON-8 package for surface mounting, providing thermal performance suitable for demanding applications. Gate charge is rated at 15nC maximum at 10V, and input capacitance is 1000pF maximum at 50V. This component is designed for use in industrial, automotive, and power supply applications. Packaged in a Tape & Reel (TR).
Additional Information
Series: OptiMOS™ 5RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.8A (Ta), 37A (Tc) |
| Rds On (Max) @ Id, Vgs | 16.9mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 43W (Tc) |
| Vgs(th) (Max) @ Id | 2.3V @ 18µA |
| Supplier Device Package | PG-TDSON-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1000 pF @ 50 V |
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