ISC0605NLSATMA1
TRENCH 40<-<100VManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ 5 N-Channel Power MOSFET, part number ISC0605NLSATMA1, offers robust performance for demanding applications. This TRENCH 40-series device features an 80 V drain-source voltage and a continuous drain current of 25 A at a 25°C ambient temperature, scaling to 195 A under continuous drain at 25°C case temperature. With a low on-resistance of 2.3 mOhm at 50 A and 10 V Vgs, and a maximum power dissipation of 156 W at 25°C case temperature, it is well-suited for power supply units, motor control, and industrial automation. The PG-TDSON-8 package provides a surface mount solution with excellent thermal characteristics. Key parameters include a gate charge of 55 nC at 4.5 V and input capacitance of 7500 pF at 40 V. It operates within a temperature range of -55°C to 150°C.
Additional Information
Series: OptiMOS™ 5RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 25A (Ta), 195A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.3mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 156W (Tc) |
| Vgs(th) (Max) @ Id | 2.3V @ 115µA |
| Supplier Device Package | PG-TDSON-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 55 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7500 pF @ 40 V |
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