ISC0603NLSATMA1
MOSFET N-CH 80V 12.3A/56A TDSONManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™ 5 series N-Channel Power MOSFET, part number ISC0603NLSATMA1, features an 80 V drain-source breakdown voltage. This surface mount device, packaged in a PG-TDSON-8-6, offers a continuous drain current of 12.3 A at 25°C ambient and 56 A at 25°C case temperature. The maximum power dissipation is rated at 2.5 W (ambient) and 52 W (case). Key parameters include a maximum on-resistance of 8.9 mOhm at 20 A and 10 Vgs, and a gate charge of 24 nC at 10 Vgs. This component is suitable for applications in automotive and industrial power management.
Additional Information
Series: OptiMOS™ 5RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12.3A (Ta), 56A (Tc) |
| Rds On (Max) @ Id, Vgs | 8.9mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 52W (Tc) |
| Vgs(th) (Max) @ Id | 2.3V @ 24µA |
| Supplier Device Package | PG-TDSON-8-6 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1600 pF @ 40 V |
Request a Quote
Clients Also Buy
BSZ070N08LS5ATMA1
MOSFET N-CH 80V 40A TSDSON
ISC0702NLSATMA1
MOSFET N-CH 60V 23A/135A TDSON-8
BSZ040N06LS5ATMA1
MOSFET N-CH 60V 40A TSDSON
