ISC035N10NM5LFATMA1
OPTIMOSTM5LINEARFET100VManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ 5 N-Channel Power MOSFET, part number ISC035N10NM5LFATMA1, offers a 100 V drain-source breakdown voltage. This surface mount device, housed in a PG-TDSON-8 FL package, features a low on-resistance of 3.5 mOhm at 50 A and 10 V gate drive. With a continuous drain current capability of 19 A at 25°C ambient and 164 A at 25°C case temperature, it supports significant power handling with a maximum dissipation of 3 W (ambient) and 217 W (case). Key parameters include a gate charge of 88 nC and input capacitance of 7200 pF. The ISC035N10NM5LFATMA1 is suitable for applications in automotive, industrial power, and consumer electronics where efficient power switching is critical. It operates reliably across a wide temperature range of -55°C to 175°C.
Additional Information
Series: OptiMOS™ 5RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 19A (Ta), 164A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.5mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3W (Ta), 217W (Tc) |
| Vgs(th) (Max) @ Id | 3.9V @ 115µA |
| Supplier Device Package | PG-TDSON-8 FL |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 88 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7200 pF @ 50 V |
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