ISC015N06NM5LFATMA1
OPTIMOSTM5LINEARFET60VManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™ 5 series N-Channel Power MOSFET, part number ISC015N06NM5LFATMA1. This device features a 60 V drain-source voltage and a continuous drain current of 32 A at 25°C ambient and 275 A at 25°C case temperature. The ISC015N06NM5LFATMA1 offers a maximum on-resistance of 1.55 mOhm at 50 A and 10 V gate drive. With a maximum power dissipation of 3 W (ambient) and 217 W (case), it is suitable for high-power applications. The component utilizes PG-TDSON-8 FL surface mount packaging and operates across a temperature range of -55°C to 175°C. This MOSFET is commonly employed in automotive and industrial power management systems.
Additional Information
Series: OptiMOS™ 5RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 32A (Ta), 275A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.55mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3W (Ta), 217W (Tc) |
| Vgs(th) (Max) @ Id | 3.45V @ 120µA |
| Supplier Device Package | PG-TDSON-8 FL |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 113 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9000 pF @ 30 V |