ISC011N03L5SATMA1
MOSFET N-CH 30V 37A/100A TDSONManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies, OptiMOS™ series, N-Channel Power MOSFET, part number ISC011N03L5SATMA1. This 30V device features an ultra-low Rds(on) of 1.1mOhm at 30A, 10V Vgs, enabling high efficiency in demanding applications. It offers continuous drain current ratings of 37A at ambient temperature and 100A at case temperature, with significant power dissipation capabilities of 2.5W (Ta) and 96W (Tc). The ISC011N03L5SATMA1 utilizes the PG-TDSON-8-1 package for efficient thermal management. Key parameters include a gate charge (Qg) of 72nC at 10V and input capacitance (Ciss) of 4700pF at 15V. This MOSFET is suitable for power supply, automotive, and industrial motor control applications.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 37A (Ta), 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.1mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 96W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | PG-TDSON-8-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 72 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4700 pF @ 15 V |
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