IRLZ44ZSPBF
MOSFET N-CH 55V 51A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRLZ44ZSPBF, offers robust performance with a 55V drain-source breakdown voltage and a continuous drain current capability of 51A at 25°C (Tc). This device features a low on-resistance of 13.5mOhm maximum at 31A and 10V Vgs, ideal for high-current applications. The D2PAK (TO-263-3, D2PAK) surface mount package ensures efficient thermal management, supporting up to 80W of power dissipation. Key parameters include a gate charge of 36nC maximum at 5V Vgs and an input capacitance of 1620pF maximum at 25V Vds. Operating temperature ranges from -55°C to 175°C (TJ). This MOSFET is utilized in various industries including automotive, industrial power control, and consumer electronics where efficient switching and high current handling are critical.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 51A (Tc) |
| Rds On (Max) @ Id, Vgs | 13.5mOhm @ 31A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 80W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 36 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1620 pF @ 25 V |
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