IRLZ44ZS
MOSFET N-CH 55V 51A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRLZ44ZS is a N-Channel power MOSFET with a Drain-Source Voltage (Vdss) of 55 V. This component features a low on-resistance (Rds On) of 13.5 mOhm maximum at 31 A and 10 V Vgs. The continuous drain current (Id) at 25°C is rated at 51 A, with a maximum power dissipation of 80 W at 25°C (Tc). It has a gate charge (Qg) of 36 nC typical at 5 V and input capacitance (Ciss) of 1620 pF maximum at 25 V. The IRLZ44ZS is packaged in a D2PAK (TO-263-3) surface mount configuration and operates across a temperature range of -55°C to 175°C. This MOSFET is suitable for applications in automotive, industrial, and power supply sectors.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 51A (Tc) |
| Rds On (Max) @ Id, Vgs | 13.5mOhm @ 31A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 80W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 36 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1620 pF @ 25 V |
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