IRLZ44ZPBF
MOSFET N-CH 55V 51A TO220ABManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® MOSFET N-Channel IRLZ44ZPBF. This through-hole TO-220AB device offers a 55V drain-source voltage and a continuous drain current of 51A at 25°C. Key parameters include a maximum Rds(on) of 13.5mOhm at 31A and 10V, and a gate charge of 36nC at 5V. With a maximum power dissipation of 80W and an operating temperature range of -55°C to 175°C, this component is suited for applications in automotive and industrial power control.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 51A (Tc) |
| Rds On (Max) @ Id, Vgs | 13.5mOhm @ 31A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 80W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 36 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1620 pF @ 25 V |