IRLZ44ZLPBF
MOSFET N-CH 55V 51A TO262Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRLZ44ZLPBF. This device features a 55V Drain-Source Voltage (Vdss) and a continuous drain current of 51A at 25°C (Tc). The IRLZ44ZLPBF offers a low on-resistance (Rds On) of 13.5mOhm at 31A and 10V Vgs. It is packaged in a TO-262-3 Long Leads, I2PAK, TO-262AA (TO-262) through-hole package, facilitating robust board mounting. With a maximum power dissipation of 80W (Tc) and an operating temperature range of -55°C to 175°C (TJ), this MOSFET is suitable for demanding applications in automotive, industrial, and power supply sectors. Key parameters include a gate charge (Qg) of 36 nC at 5V Vgs and an input capacitance (Ciss) of 1620 pF at 25V Vds.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 51A (Tc) |
| Rds On (Max) @ Id, Vgs | 13.5mOhm @ 31A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 80W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-262 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 36 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1620 pF @ 25 V |