IRLZ44ZL
MOSFET N-CH 55V 51A TO262Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® series N-Channel Power MOSFET, part number IRLZ44ZL. This through-hole component features a Drain-Source Voltage (Vdss) of 55V and a continuous drain current (Id) capability of 51A at 25°C. The device offers a maximum on-resistance (Rds On) of 13.5mOhm at 31A and 10V gate-source voltage. With a gate charge (Qg) of 36 nC at 5V and input capacitance (Ciss) of 1620 pF at 25V, it is designed for efficient switching. The power dissipation (Max) is rated at 80W (Tc). Operating temperature range is -55°C to 175°C. The TO-262-3 Long Leads package is suitable for applications in industrial motor control, power supply design, and automotive systems.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 51A (Tc) |
| Rds On (Max) @ Id, Vgs | 13.5mOhm @ 31A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 80W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-262 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 36 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1620 pF @ 25 V |
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