IRLZ44NSTRRPBF
MOSFET N-CH 55V 47A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRLZ44NSTRRPBF is a high-performance N-Channel Power MOSFET. This device features a 55V drain-source breakdown voltage and a continuous drain current capability of 47A at 25°C case temperature. The IRLZ44NSTRRPBF offers a low on-resistance of 22mOhm maximum at 25A and 10V gate-source voltage. Designed for surface mounting, it is housed in a TO-263-3, D2PAK package. Key parameters include a gate charge (Qg) of 48nC at 5V and input capacitance (Ciss) of 1700pF at 25V. This component is suitable for power management applications across various industries, including automotive and industrial power control. The operating temperature range is -55°C to 175°C.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 47A (Tc) |
| Rds On (Max) @ Id, Vgs | 22mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 110W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 48 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1700 pF @ 25 V |
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