IRLZ44NSPBF
MOSFET N-CH 55V 47A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRLZ44NSPBF is an N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a Drain-to-Source Voltage (Vdss) of 55V and a continuous drain current capability of 47A at 25°C (Tc). The ON-resistance (Rds On) is a maximum of 22mOhm at 25A and 10V gate drive. The device is packaged in a TO-263-3, D2PAK (2 Leads + Tab) for surface mounting. Key parameters include a gate charge (Qg) of 48nC (max) at 5V and input capacitance (Ciss) of 1700pF (max) at 25V. Power dissipation is rated at 3.8W (Ta) and 110W (Tc). Operating temperature range is -55°C to 175°C (TJ). This MOSFET is suitable for industrial, automotive, and power supply applications demanding robust performance.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 47A (Tc) |
| Rds On (Max) @ Id, Vgs | 22mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 110W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 48 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1700 pF @ 25 V |
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