IRLZ44NL
MOSFET N-CH 55V 47A TO262Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRLZ44NL. This through-hole component features a Drain-Source Voltage (Vdss) of 55 V and a continuous Drain Current (Id) of 47 A at 25°C (Tc). The Rds On is a maximum of 22 mOhm at 25 A, 10 V. Key parameters include a Gate Charge (Qg) of 48 nC at 5 V and an Input Capacitance (Ciss) of 1700 pF at 25 V. The device is rated for a maximum power dissipation of 110 W (Tc) and operates within a temperature range of -55°C to 175°C. The component is supplied in a TO-262-3 Long Leads package. This MOSFET is utilized in applications such as power switching and motor control within the automotive and industrial sectors.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 47A (Tc) |
| Rds On (Max) @ Id, Vgs | 22mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 110W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | TO-262 |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 48 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1700 pF @ 25 V |