IRLZ34NS
MOSFET N-CH 55V 30A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies' IRLZ34NS is an N-Channel HEXFET® power MOSFET designed for high-efficiency switching applications. This component features a drain-source breakdown voltage (Vdss) of 55V and a continuous drain current (Id) capability of 30A at 25°C (Tc). The low on-resistance (Rds On) of 35mOhm at 16A and 10V gate drive minimizes conduction losses. With a maximum gate charge (Qg) of 25 nC at 5V, it offers efficient switching performance. The device is housed in a surface-mount TO-263-3, D2PAK package, enabling high power density. Maximum power dissipation is rated at 68W (Tc). The IRLZ34NS is suitable for power management, automotive, and industrial control systems.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 16A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 68W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 880 pF @ 25 V |
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