IRLZ34NLPBF
MOSFET N-CH 55V 30A TO262Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® series IRLZ34NLPBF is an N-Channel Power MOSFET featuring a 55V drain-source voltage rating and a continuous drain current capability of 30A at 25°C (Tc). This through-hole component, packaged in a TO-262-3 configuration, offers a low on-resistance of 35mOhm maximum at 16A and 10V Vgs. Key parameters include a gate charge (Qg) of 25 nC maximum at 5V Vgs and input capacitance (Ciss) of 880 pF maximum at 25V Vds. Power dissipation is rated at 68W at 25°C (Tc) and 3.8W at 25°C (Ta). Operating temperature ranges from -55°C to 175°C. This MOSFET is suitable for applications in automotive, industrial control, and power supply sectors.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 16A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 68W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | TO-262 |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 880 pF @ 25 V |
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