IRLZ24NSTRLPBF
MOSFET N-CH 55V 18A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRLZ24NSTRLPBF is an N-Channel Power MOSFET designed for demanding applications. This surface mount device features a 55V drain-source breakdown voltage and a continuous drain current capability of 18A at 25°C (Tc). With a low on-resistance (Rds On) of 60mOhm at 11A and 10V Vgs, it minimizes conduction losses. The MOSFET exhibits a maximum gate charge of 15 nC at 5V and an input capacitance of 480 pF at 25V. Power dissipation is rated at 45W (Tc) and 3.8W (Ta). The D2PAK (TO-263-3) package facilitates efficient thermal management. Operating temperature range is -55°C to 175°C (TJ). This component is widely utilized in power supply units, motor control, and automotive electronics.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 11A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 45W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 480 pF @ 25 V |
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