IRLZ24NS
MOSFET N-CH 55V 18A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® IRLZ24NS is a 55V N-Channel Power MOSFET. This device features a continuous drain current capability of 18A at 25°C (Tc) and a low on-resistance of 60mOhm maximum at 11A, 10V. The IRLZ24NS is designed for efficient power switching applications, offering a gate charge of 15 nC maximum at 5V and an input capacitance of 480 pF maximum at 25V. With a maximum power dissipation of 45W at 25°C (Tc), this MOSFET is suitable for demanding applications. It is housed in a D2PAK (TO-263-3, D2PAK (2 Leads + Tab), TO-263AB) surface mount package, enabling streamlined assembly in high-volume manufacturing. The operating temperature range is -55°C to 175°C (TJ). This component is commonly utilized in industrial automation, power supplies, and automotive electronics.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 11A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 45W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 480 pF @ 25 V |
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