IRLZ24NPBF
MOSFET N-CH 55V 18A TO220ABManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRLZ24NPBF, is a through-hole TO-220AB packaged device designed for robust power switching applications. This component features a drain-source breakdown voltage (Vds) of 55 V and a continuous drain current (Id) rating of 18 A at 25°C (Tc), with a maximum power dissipation of 45 W (Tc). The on-resistance (Rds On) is specified at a maximum of 60 mOhm when conducting 11 A with a gate-source voltage (Vgs) of 10 V. With a gate charge (Qg) of 15 nC at 5 V and input capacitance (Ciss) of 480 pF at 25 V, it offers efficient switching characteristics. The IRLZ24NPBF is suitable for applications in automotive, industrial automation, and power supply design. It operates across a temperature range of -55°C to 175°C.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 10 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 11A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 45W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 480 pF @ 25 V |
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