IRLZ24NL
MOSFET N-CH 55V 18A TO262Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRLZ24NL is an N-channel power MOSFET designed for efficient switching applications. This component features a drain-source voltage (Vdss) of 55V and a continuous drain current (Id) of 18A at 25°C (Tc). The low on-resistance (Rds On) of 60mOhm at 11A and 10V gate-source voltage (Vgs) minimizes conduction losses. With a gate charge (Qg) of 15 nC maximum at 5V Vgs and input capacitance (Ciss) of 480 pF maximum at 25V Vds, it offers robust switching performance. The device is housed in a TO-262-3 Long Leads package, suitable for through-hole mounting. Power dissipation capabilities are 3.8W (Ta) and 45W (Tc). This MOSFET is commonly utilized in automotive, industrial, and consumer electronics power management solutions.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 11A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 45W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | TO-262 |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 480 pF @ 25 V |
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