IRLU9343
MOSFET P-CH 55V 20A I-PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® P-Channel MOSFET, part number IRLU9343, offers a 55V drain-source voltage with a continuous drain current of 20A at 25°C (Tc). This through-hole device, packaged in a TO-251AA (IPAK) configuration, features a maximum power dissipation of 79W (Tc). The IRLU9343 exhibits a typical Rds(On) of 105mOhm at 3.4A and 10V, with a gate charge of 47nC at 10V and input capacitance of 660pF at 50V. Designed for efficient switching, it operates across a temperature range of -40°C to 175°C (TJ) and supports gate-source voltages up to ±20V. This component finds application in power management and control systems across various industrial sectors.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 105mOhm @ 3.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 79W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 47 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 660 pF @ 50 V |
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