IRLU8743PBF
MOSFET N-CH 30V 160A IPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRLU8743PBF. This device features a 30V drain-source breakdown voltage and a continuous drain current capability of 160A at 25°C (Tc). With a low on-resistance of 3.1mOhm at 25A and 10V Vgs, it is optimized for high efficiency. The gate threshold voltage is 2.35V at 100µA, and it supports gate-source voltages up to ±20V. Key parameters include a maximum gate charge of 59nC at 4.5V and an input capacitance (Ciss) of 4880pF at 15V. The power dissipation is rated at 135W (Tc). This component is housed in an IPAK (TO-251AA) package with through-hole mounting. Operating temperature range is -55°C to 175°C (TJ). Applications include power management, automotive, and industrial systems.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 160A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.1mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 135W (Tc) |
| Vgs(th) (Max) @ Id | 2.35V @ 100µA |
| Supplier Device Package | IPAK (TO-251AA) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 59 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4880 pF @ 15 V |
Request a Quote
Clients Also Buy
IRLML6401TRPBF
MOSFET P-CH 12V 4.3A SOT23
IRLML6302TRPBF
MOSFET P-CH 20V 780MA SOT23
IRLML6402TRPBF
MOSFET P-CH 20V 3.7A SOT23
