IRLU8726PBF
MOSFET N-CH 30V 86A IPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRLU8726PBF, offers a 30V drain-source voltage and continuous drain current of 86A at 25°C. This device features a low on-resistance of 5.8mOhm maximum at 25A and 10V, with a gate threshold voltage of 2.35V maximum at 50µA. The input capacitance (Ciss) is 2150pF maximum at 15V, and gate charge (Qg) is 23nC maximum at 4.5V. Designed for through-hole mounting in the IPAK package (TO-251-3 Short Leads), this MOSFET is rated for 75W power dissipation. It operates across a temperature range of -55°C to 175°C. This component is widely utilized in industrial and automotive applications requiring efficient power switching.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 86A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.8mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 75W (Tc) |
| Vgs(th) (Max) @ Id | 2.35V @ 50µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2150 pF @ 15 V |