IRLU8721-701PBF
MOSFET N-CH 30V 65A I-PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® series N-Channel power MOSFET, part number IRLU8721-701PBF, offers a 30V drain-source breakdown voltage and a continuous drain current of 65A at 25°C (Tc). This surface mount device features a low on-resistance of 8.4mOhm maximum at 25A and 10V Vgs, with a gate charge (Qg) of 13 nC maximum at 4.5V. The device boasts a high power dissipation capability of 65W (Tc) and operates across a wide temperature range from -55°C to 175°C (TJ). Its I-PAK (LF701) package, also known as TO-252-4, is suitable for demanding applications in automotive and industrial sectors. The input capacitance (Ciss) is rated at 1030 pF maximum at 15V.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-4, DPAK (3 Leads + Tab) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 65A (Tc) |
| Rds On (Max) @ Id, Vgs | 8.4mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 65W (Tc) |
| Vgs(th) (Max) @ Id | 2.35V @ 25µA |
| Supplier Device Package | I-PAK (LF701) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1030 pF @ 15 V |
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