IRLU8259PBF
MOSFET N-CH 25V 57A IPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® series N-Channel Power MOSFET, part number IRLU8259PBF. This device features a 25V drain-source breakdown voltage and a continuous drain current capability of 57A at 25°C case temperature. The low on-resistance of 8.7mOhm maximum at 21A and 10V Vgs, along with a gate charge of 10nC at 4.5V Vgs, optimizes switching performance. With a maximum power dissipation of 48W at 25°C case temperature and an operating temperature range of -55°C to 175°C, this MOSFET is suitable for demanding applications. The TO-251-3 Short Leads, IPAK package is designed for through-hole mounting. This component is commonly utilized in automotive, industrial motor control, and power supply applications.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 57A (Tc) |
| Rds On (Max) @ Id, Vgs | 8.7mOhm @ 21A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 48W (Tc) |
| Vgs(th) (Max) @ Id | 2.35V @ 25µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 900 pF @ 13 V |
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