IRLU8256PBF
MOSFET N-CH 25V 81A IPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® IRLU8256PBF is a 25V N-Channel Power MOSFET in an IPAK package. This device offers a continuous drain current of 81A at 25°C (Tc) and a maximum power dissipation of 63W (Tc). Key parameters include a low on-resistance of 5.7mOhm at 25A and 10V, a gate charge of 15nC at 4.5V, and an input capacitance of 1470pF at 13V. The operating temperature range is -55°C to 175°C. This component is suitable for applications in automotive and industrial power management.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 81A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.7mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 63W (Tc) |
| Vgs(th) (Max) @ Id | 2.35V @ 25µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1470 pF @ 13 V |
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