IRLU8113PBF
MOSFET N-CH 30V 94A I-PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRLU8113PBF, offers a 30V drain-source voltage and a continuous drain current capability of 94A at 25°C. This through-hole component features a maximum power dissipation of 89W and a low on-resistance of 6mOhm at 15A and 10V. The device is designed with a gate charge of 32 nC at 4.5V and an input capacitance of 2920 pF at 15V. Operating across a temperature range of -55°C to 175°C, the IRLU8113PBF is housed in an IPAK package (TO-251-3 Short Leads, TO-251AA). This MOSFET is suitable for high-power switching applications in industrial automation, power supply, and automotive sectors.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 94A (Tc) |
| Rds On (Max) @ Id, Vgs | 6mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 89W (Tc) |
| Vgs(th) (Max) @ Id | 2.25V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2920 pF @ 15 V |
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