IRLU7843-701PBF
MOSFET N-CH 30V 161A IPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® IRLU7843-701PBF is a N-Channel Power MOSFET designed for high-current applications. This component features a 30V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 161A at 25°C (Tc). The low on-resistance of 3.3mOhm at 15A and 10V (Vgs) contributes to efficient power delivery, with a maximum power dissipation of 140W (Tc). Operating with a gate drive range from 4.5V to 10V, it offers a typical gate charge of 50 nC at 4.5V and an input capacitance (Ciss) of 4380 pF at 15V. The IRLU7843-701PBF is housed in a TO-252-4, DPAK (3 leads + tab) package, suitable for surface mounting. Its wide operating temperature range of -55°C to 175°C (TJ) makes it suitable for demanding environments. This MOSFET is commonly utilized in automotive, industrial, and power supply applications.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-4, DPAK (3 Leads + Tab) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 161A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.3mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 140W (Tc) |
| Vgs(th) (Max) @ Id | 2.3V @ 250µA |
| Supplier Device Package | I-PAK (LF701) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4380 pF @ 15 V |
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