IRLU7821
MOSFET N-CH 30V 65A I-PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRLU7821, is engineered for demanding applications. This component features a 30 V drain-source breakdown voltage and a continuous drain current capability of 65 A at 25°C (Tc), with a maximum power dissipation of 75 W (Tc). The low on-resistance of 10 mOhm at 15 A and 10 V gate-source voltage (Vgs) is achieved through its advanced trench MOSFET technology. Key parameters include a gate charge (Qg) of 14 nC at 4.5 V and an input capacitance (Ciss) of 1030 pF at 15 V. The IRLU7821 is housed in a TO-251-3 Short Leads, IPAK package for through-hole mounting and operates across a wide temperature range of -55°C to 175°C. This device is suitable for use in automotive, industrial, and power management systems.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 65A (Tc) |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 75W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1030 pF @ 15 V |
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