IRLU7807ZPBF
MOSFET N-CH 30V 43A I-PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRLU7807ZPBF. This through-hole device features a 30V drain-source voltage and a continuous drain current of 43A at 25°C. The IRLU7807ZPBF offers a low on-resistance of 13.8mOhm at 15A and 10V Vgs, with a gate charge of 11 nC at 4.5V. It is designed for efficient operation across a wide temperature range of -55°C to 175°C. Key parameters include a maximum power dissipation of 40W and an input capacitance of 780 pF. The TO-251-3 Short Leads, IPAK package is provided in tube packaging. This component is suitable for applications in automotive and industrial power management.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 43A (Tc) |
| Rds On (Max) @ Id, Vgs | 13.8mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 40W (Tc) |
| Vgs(th) (Max) @ Id | 2.25V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 780 pF @ 15 V |
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