IRLU4343
MOSFET N-CH 55V 26A I-PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRLU4343. This through-hole device features a 55V drain-source voltage rating and a continuous drain current capability of 26A at 25°C (Tc). With a maximum Rds(on) of 50mOhm at 4.7A and 10V Vgs, it offers efficient switching. The IRLU4343 has a gate charge of 42 nC at 10V and an input capacitance of 740 pF at 50V. It is rated for 79W power dissipation at 25°C (Tc) and operates across a temperature range of -55°C to 175°C (TJ). The IPAK package (TO-251-3 Short Leads) is suitable for applications in automotive, industrial motor control, and power supply sectors. The gate-source voltage tolerance is ±20V.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 26A (Tc) |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 4.7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 79W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 42 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 740 pF @ 50 V |
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