IRLU3915PBF
MOSFET N-CH 55V 30A IPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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The Infineon Technologies HEXFET® IRLU3915PBF is an N-Channel Power MOSFET designed for demanding applications. This component features a 55V drain-source breakdown voltage and a continuous drain current capability of 30A at 25°C case temperature. With a low on-resistance (Rds On) of 14mOhm at 30A and 10V Vgs, it minimizes conduction losses. The IPAK (TO-251AA) through-hole package facilitates efficient thermal management, supporting a maximum power dissipation of 120W (Tc). Key electrical characteristics include a gate charge (Qg) of 92 nC maximum at 10V Vgs and input capacitance (Ciss) of 1870 pF maximum at 25V Vds. Operating across an extended temperature range of -55°C to 175°C, this MOSFET is suitable for automotive, industrial power control, and high-power switching applications.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 14mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 120W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | IPAK (TO-251AA) |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 92 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1870 pF @ 25 V |
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