IRLU3715
MOSFET N-CH 20V 54A I-PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRLU3715. This device features a 20V Drain-to-Source voltage (Vdss) and a continuous drain current (Id) of 54A at 25°C (Tc). The low on-resistance (Rds On) is specified at 14mOhm maximum at 26A and 10V Vgs. Gate charge (Qg) is 17nC maximum at 4.5V Vgs, with input capacitance (Ciss) at 1060pF maximum at 10V Vds. The N-Channel MOSFET is designed for through-hole mounting in the TO-251-3 Short Leads, IPAK package. Power dissipation is rated at 71W at 25°C (Tc). This component is suitable for applications requiring efficient power switching in automotive and industrial sectors.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 54A (Tc) |
| Rds On (Max) @ Id, Vgs | 14mOhm @ 26A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 71W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1060 pF @ 10 V |
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