IRLU3714ZPBF
MOSFET N-CH 20V 37A I-PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® MOSFET, part number IRLU3714ZPBF, is an N-Channel device featuring a 20V drain-source breakdown voltage. This through-hole component, packaged in an IPAK (TO-251-3 Short Leads, TO-251AA), offers a continuous drain current of 37A at 25°C (Tc) and a maximum power dissipation of 35W (Tc). The Rds On is specified at a maximum of 15mOhm at 15A and 10V gate-source voltage. Key parameters include a gate charge of 7.1 nC at 4.5V and input capacitance of 560 pF at 10V. The operating temperature range is -55°C to 175°C (TJ). This MOSFET is suitable for applications in industrial and automotive sectors.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 37A (Tc) |
| Rds On (Max) @ Id, Vgs | 15mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 35W (Tc) |
| Vgs(th) (Max) @ Id | 2.55V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 7.1 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 560 pF @ 10 V |
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